Nanoscale Defect Removal In The Wafer Post Etch Residue Remover Market
The fabrication of advanced multi-layer copper interconnects, high-aspect-ratio 3D NAND memory holes, and FinFET/GAA nanosheet transistor gates involves intensive reactive-ion etching (RIE) and plasma ashing steps. During dry plasma etching, halocarbon process gases interact with volatile metal species, silicon, and organic photoresists, depositing tough, chemically inert polymeric residues...
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